3 years ago

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

Interfacial
Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ
Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide
Interface Using X-ray Photoelectron Spectroscopy
Suntharampillai Thevuthasan, Richard P. Oleksak, Brendan T. Flynn, Gregory S. Herman
A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In3+ to In0, that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal–semiconductor field-effect transistors.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b18674

DOI: 10.1021/acsami.7b18674

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