Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$.
Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr$_2$Ge$_2$Te$_6$ and CrI$_3$. Of particular interest in compounds possessing semiconducting properties is the interplay between magnetism and transport, which has remained entirely unexplored. Here we report first magneto-transport measurements on thin exfoliated CrI$_3$ crystals above and below the ferromagnetic phase transition at T$_c$ = 61 K. We find that conduction in the direction perpendicular to the crystalline planes- mediated by electrons tunneling through the bandgap of CrI$_3$- exhibits variations as a function of applied field that correspond to a magnetoresistance as large as 10 000 %. The evolution of the measured magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states. Our findings demonstrate the presence of an extremely strong coupling between charge carriers and magnetism in magnetic van der Waals semiconductors, and show that the study of transport can unveil phenomena not apparent in common magnetization measurements.
Publisher URL: http://arxiv.org/abs/1801.08188