3 years ago

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of $p$-type amorphous oxide semiconductors

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of $p$-type amorphous oxide semiconductors
G. Pourtois, J. Genoe, P. Heremans, A. de Jamblinne de Meux
Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-prin...

Publisher URL: http://link.aps.org/doi/10.1103/PhysRevB.97.045208

DOI: 10.1103/PhysRevB.97.045208

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