3 years ago

Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures.

Bevin Huang, Xinghan Cai, David H. Cobden, Xiaoou Zhang, Nathan P. Wilson, Tiancheng Song, Wang Yao, Takashi Taniguchi, Kyle L. Seyler, Michael A. McGuire, Kenji Watanabe, Lin Zhu, Xiaodong Xu, Matisse Wei-Yuan Tu, Di Xiao

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Publisher URL: http://arxiv.org/abs/1801.08679

DOI: arXiv:1801.08679v1

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