3 years ago

InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Simone Bianconi, Chee Leong Tan, Min-Su Park, Robert Brown, Mohsen Rezaei, Hooman Mohseni, Iman Nia
Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It ...

Publisher URL: http://www.osapublishing.org/abstract.cfm

DOI: ome-8-2-413

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