5 years ago

A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal–Insulator Transition

A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal–Insulator Transition
Yiwei Liu, Run-Wei Li, Xiao-Hong Xu, Huali Yang, Jie Shang, Wuhong Xue, Hongwei Tan, Xiaohui Yi, Gang Liu, Zhicheng Zhong, Shuang Gao, Yuehua Dai, Jun Ding, Liang Pan
Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal–insulator transition (MIT) of a 1D VO2 nanochannel constructed through an electric-field-induced oxygen ion migration process in V2O5 thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn-on voltage slope of <0.5 mV dec−1, fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of <4.3% is demonstrated in the VO2 nanochannel device. High-resolution transmission electron microscopy observation and theoretical computation verify that the superior electrical properties of the present device can be ascribed to the electroformation of nanoscale VO2 nanochannel in V2O5 thin films. More importantly, the incorporation of the present device into a Pt/HfO2/Pt/VO2/Pt 1S1R unit can ensure the correct reading of the HfO2 memory continuously for 107 cycles, therefore demonstrating its great possibility as a reliable selector in high-density crossbar memory arrays. A 1D vanadium dioxide nanochannel is constructed via electric-field-induced ion transport and related solid-state redox reaction in V2O5 thin film. A superior metal–insulator transition of VO2 with sharp transition, fast switching speed, low energy consumption, and excellent reproducibility is demonstrated. The VO2 nanostructure can act as a promising candidate for the selector element in high-density crossbar memory arrays.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/adma.201702162

You might also like
Discover & Discuss Important Research

Keeping up-to-date with research can feel impossible, with papers being published faster than you'll ever be able to read them. That's where Researcher comes in: we're simplifying discovery and making important discussions happen. With over 19,000 sources, including peer-reviewed journals, preprints, blogs, universities, podcasts and Live events across 10 research areas, you'll never miss what's important to you. It's like social media, but better. Oh, and we should mention - it's free.

  • Download from Google Play
  • Download from App Store
  • Download from AppInChina

Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.