3 years ago

Chemically stabilized epitaxial wurtzite-BN thin film.

Rajendra Singh, Abhishek Chaturvedi, Badri Vishal, Ranjan Datta, Rajib Sahu, M.B. Sreedhara, Upadrasta Ramamurty, Ankit Sharma, Usha Bhat

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

Publisher URL: http://arxiv.org/abs/1801.09329

DOI: arXiv:1801.09329v1

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