3 years ago

A Novel and Facile Route to Synthesize Atomic-Layered MoS2 Film for Large-Area Electronics

A Novel and Facile Route to Synthesize Atomic-Layered MoS2 Film for Large-Area Electronics
Ki Kang Kim, Hyeong Jin Kim, Joo Song Lee, Seungho Bang, Soo Ho Choi, So Young Park, Ji-Hoon Park, Woochul Yang, Mun Seok Jeong, Soo Min Kim, Jae-Young Choi, Stephen Boandoh
High-quality and large-area molybdenum disulfide (MoS2) thin film is highly desirable for applications in large-area electronics. However, there remains a challenge in attaining MoS2 film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few-layered MoS2 film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)6) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS2 film is readily achievable in 20 min. Large-area MoS2 field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm2 V−1 s−1, which is the highest reported for bottom-gated MoS2-FETs fabricated via photolithography with an on/off ratio of ≈105 at room temperature. To synthesize large-area MoS2 film, the growth substrate is coated with an aqueous solution of Na2MoO4 prior to synthesis. Growth begins with the supply of liquid sulfur precursor via a bubbling system in an inert atmosphere. With adequate control of the concentration of Na2MoO4 and hydrogen flow, MoS2 film with controlled thickness is grown in 20 min.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/smll.201701306

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