3 years ago

Flaw-Containing Alumina Hollow Nanostructures Have Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency GaN Light-Emitting Diodes

Flaw-Containing Alumina Hollow Nanostructures Have
Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency
GaN Light-Emitting Diodes
Heung Nam Han, Euijoon Yoon, Ju-Young Kim, Sung-gyu Kang, In-suk Choi, Jeonghwan Jang, Daeyoung Moon, Jin-Yoo Suh
In the present study, we found that α-alumina hollow nanoshell structure can exhibit an ultrahigh fracture strength even though it contains a significant number of nanopores. By systematically performing in situ mechanical testing and finite element simulations, we could measure that the fracture strength of an α-alumina hollow nanoshell structure is about four times higher than that of the conventional bulk size α-alumina. The high fracture strength of the α-alumina hollow nanoshell structure can be explained in terms of conventional fracture mechanics, in that the position and size of the nanopores are the most critical factors determining the fracture strength, even at the nanoscales. More importantly, by deriving a fundamental understanding, we would be able to provide guidelines for the design of reliable ceramic nanostructures for advanced GaN light-emitting diodes (LEDs). To that end, we demonstrated how our ultrastrong α-alumina hollow nanoshell structures could be successfully incorporated into GaN LEDs, thereby greatly improving the luminous efficiency and output power of the LEDs by 2.2 times higher than that of conventional GaN LEDs.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b05009

DOI: 10.1021/acs.nanolett.7b05009

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