3 years ago

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells

Ping Chen, Degang Zhao, Dongping Shi, Yuantao Zhang, Zongshun Liu, Feng Liang, Shuangtao Liu, Desheng Jiang, Guotong Du, Wei Liu, Yao Xing, Jianjun Zhu, Liqun Zhang, Jing Yang, Mo Li, Wenjie Wang
Two InGaN/GaN multiple-quantum-well (MQW) samples with identical epitaxial structures are grown at different growth rates via metal-organic chemical vapor deposition system. The room temperature photoluminescence intensity of the fast-grown sample is much stronger than that of the slow-grown one. ...

Publisher URL: http://www.osapublishing.org/abstract.cfm

DOI: oe-26-3-3427

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