ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces
5 years ago

Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor
Yang-Kyu Choi, Byung-Hyun Lee, Jun-Young Park, Hagyoul Bae, Geon-Beom Lee
This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide-semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (ION) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b17794

DOI: 10.1021/acsami.7b17794

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