5 years ago

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
Min-Chin Yu, Po-Tsun Liu, Ta-Chun Chien, Po-Yi Kuo, Dun-Bao Ruan, Yu-Chuan Chiu, Kai-jhih Gan, Simon[space]M. Sze
This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers, which were deposited by an ion bombardment-free process.

Publisher URL: http://feeds.rsc.org/~r/rss/ra/~3/POv582OqPZs/C7RA13193C

DOI: 2018/RA/C7RA13193C

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