4 years ago

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing
Yuan Xie, Hao Zhang, Wei Pang, Chongling Sun, Yuchen Yue, Jing Liu, Sigang Shi, Dong Sun, Shuangqing Fan, Jiancui Chen, Enxiu Wu, Sen Wu, Yiyu Feng, Wei Feng, Zhihong Feng, Wanfu Shen, Daihua Zhang
Understanding and engineering the interface between metal and two-dimensional materials are of great importance to the research and development of nanoelectronics. In many cases the interface of metal and 2D materials can dominate the transport behavior of the devices. In this study, we focus on the metal contacts of MoTe2 (molybdenum ditelluride) FETs (field effect transistors) and demonstrate how to use post-annealing treatment to modulate their transport behaviors in a controlled manner. We have also carried out low temperature and transmission electron microscopy studies to understand the mechanisms behind the prominent effect of the annealing process. Changes in transport properties are presumably due to anti-site defects formed at the metal–MoTe2 interface under elevated temperature. The study provides more insights into MoTe2 field effect devices and suggests guidelines for future optimizations.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b06739

DOI: 10.1021/acsami.7b06739

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