ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces
5 years ago

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process
Hee Jun Kim, Jae Won Na, Hyun Jae Kim, Seonghwan Hong, Jin Hyeok Lee, You Seung Rim
Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V–1 s–1 and a on/off current ratio over 107 is successfully demonstrated.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b06643

DOI: 10.1021/acsami.7b06643

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