Crystal Growth & Design
Crystal Growth & Design
5 years ago

Epitaxial Growth of Bandgap Tunable ZnSnN2 Films on (0001) Al2O3 Substrates by Using a ZnO Buffer

Epitaxial Growth of Bandgap Tunable ZnSnN2 Films on (0001) Al2O3 Substrates by Using a ZnO Buffer
Jung-Hoon Song, Soon-Ku Hong, Duc Duy Le, Trong Si Ngo
By applying ZnO as a buffer, we demonstrated a simple but useful approach to grow high quality single crystal ZnSnN2 films on (0001) sapphire substrate. (a) Photograph of a sample with ZnSnN2 film grown at 450 °C, (b) cross-sectional STEM EDS element mapping result showing the sample structure, (c) HRTEM micrograph observed at [112̅0] zone axis of the single crystal ZnSnN2.

Publisher URL: http://dx.doi.org/10.1021/acs.cgd.7b01285

DOI: 10.1021/acs.cgd.7b01285

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