Advanced Energy Materials
Advanced Energy Materials
5 years ago

Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors

Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors
Vincent Steininger, Levent Gütay, Johannes Schoneberg, Devendra Pareek, Janet Neerken, Jürgen Parisi, Teoman Taskesen
Kesterite is an attractive material for absorber layers in thin film photovoltaics. Solar cells based on kesterite have shown a substantial progress over the last decade; nevertheless, further improvements in device efficiency are pending due to the open-circuit voltage (Voc) deficit (i.e., difference between the maximum V oc that can be achieved according to Shockley–Queisser limit and actual V oc from the device). In this study, the optoelectronic properties of the author's internal record Cu2ZnSnSe4 solar cell, which shows a power conversion efficiency of 11.4%, are presented. The device measurements reveal a Voc deficit of 337 mV, which is one of the lowest V oc deficits in the literature. Moreover, an unusual behavior for kesterite is observed: (i) photon energy of the photoluminescence emission and (ii) the extrapolated V oc for 0 K are both matching the band gap region of the absorber. These results indicate a significant improvement in the recombination characteristics and absorber quality in comparison to other kesterite devices in literature. Optoelectronic properties of an 11.4% Cu2ZnSnSe4 solar cell are presented. The device shows an unusual behavior for kesterite: (i) photon energy of the photoluminescence emission and (ii) the extrapolated Voc for 0 K are both matching the band gap region of the absorber. These properties lead to one of the lowest Voc deficits for kesterite in the literature.

Publisher URL: http://onlinelibrary.wiley.com/resolve/doi

DOI: 10.1002/aenm.201703295

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