4 years ago

Enhanced intervalley scattering of aluminum oxide-deposited graphene

Enhanced intervalley scattering of aluminum oxide-deposited graphene
In this article, we report the weak localization effect of aluminum oxide (Al2O3)-deposited graphene field effect transistor. Initially, the resistivity tunability of graphene and Al2O3-deposited graphene devices were studied by applying gate voltages. Furthermore, the magnetotransport properties were investigated as a function of gate voltages and temperatures. It was observed that the phase coherence and intervalley scattering rates are enhanced with the deposition of Al2O3 on graphene film compared to uncovered graphene. Most transistor device fabrication processes use an oxide layer for top gate. Therefore, it would be interesting to explore the effect of an oxide capping layer on the magnetotransport properties of graphene.

Publisher URL: www.sciencedirect.com/science

DOI: S0008622317307492

You might also like
Discover & Discuss Important Research

Keeping up-to-date with research can feel impossible, with papers being published faster than you'll ever be able to read them. That's where Researcher comes in: we're simplifying discovery and making important discussions happen. With over 19,000 sources, including peer-reviewed journals, preprints, blogs, universities, podcasts and Live events across 10 research areas, you'll never miss what's important to you. It's like social media, but better. Oh, and we should mention - it's free.

  • Download from Google Play
  • Download from App Store
  • Download from AppInChina

Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.