5 years ago

Electron–Lattice Coupling in Correlated Materials of Low Electron Occupancy

Electron–Lattice Coupling in Correlated Materials of Low Electron Occupancy
Minsu Choi, Daesu Lee, Jonghyun Yoon, Kitae Eom, Chang-Beom Eom, Jung-Woo Lee, Kyung Song, Jaichan Lee, Si-Young Choi, Euiyoung Choi
In correlated materials including transition metal oxides, electronic properties and functionalities are modulated and enriched by couplings between the electron and lattice degrees of freedom. These couplings are controlled by external parameters such as chemical doping, pressure, magnetic and electric fields, and light irradiation. However, the electron–lattice coupling relies on orbital characters, i.e., symmetry and occupancy, of t2g and eg orbitals, so that a large electron–lattice coupling is limited to eg electron system, whereas t2g electron system exhibits an inherently weak coupling. Here, we design and demonstrate a strongly enhanced electron–lattice coupling in electron-doped SrTiO3, that is, the t2g electron system. In ultrathin films of electron-doped SrTiO3 [i.e., (La0.25Sr0.75)TiO3], we reveal the strong electron–lattice–orbital coupling, which is manifested by extremely increased tetragonality and the corresponding metal-to-insulator transition. Our findings open the way of an active tuning of the charge–lattice–orbital coupling to obtain new functionalities relevant to emerging nanoelectronic devices.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b02109

DOI: 10.1021/acs.nanolett.7b02109

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