3 years ago

Achieving high performance thin film transistors based on Gallium doped Indium Zinc Tin Oxide

Hui Yang, Jinbao Su, Ran Li, Lanchao Jia, Depeng Liu, Yaobin Ma, Xiqing Zhang

In this paper, staggered bottom-gate amorphous oxide thin film transistors with a channel layer of gallium doped indium-zinc-tin oxide (IZTO:Ga) have been fabricated by radio frequency magnetron sputtering at room temperature on SiO2/Si substrate. Under the annealing treatment at 350 °C in air atmosphere, the IZTO:Ga films still kept amorphous and the transmittivity of the IZTO:Ga film was over 80% in the visible range. The IZTO:Ga TFTs showed desired performance with saturation mobility of 36.3 cm2V-1s-1, subthreshold swing value of 0.42 V/decade , current on/off (Ion/Ioff) up to 109 with the off current as low as 4.5×10-13 A and exhibited the enhancement mode with a threshold voltage of 1.0 V. Besides, the positive and negative bias stability of the IZTO:Ga TFTs without passivation is also measured in air with the stress time up to 3600 s and the threshold voltage(VTH) showed a shift for +4.6 V and -5.4 V respectively.

Publisher URL: https://www.sciencedirect.com/science/article/pii/S0749603619320245

DOI: 10.1016/j.spmi.2020.106489

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