Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

5 years ago

Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

Reine Wallenberg, Olli-Pekka Kilpi, Erik Lind, Jun Wu, Axel R. Persson, Johannes Svensson, Lars-Erik Wernersson

III–V compound semiconductors offer a path to continue Moore’s law due to their excellent electron transport properties. One major challenge, integrating III–V’s on Si, can be addressed by using vapor–liquid–solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal–oxide–semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III–V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b02251

DOI: 10.1021/acs.nanolett.7b02251