Inorganic Chemistry
Inorganic Chemistry
5 years ago

Crystal Structure, Stability, and Physical Properties of Metastable Electron-Poor Narrow-Gap AlGe Semiconductor

Crystal Structure, Stability, and Physical Properties of Metastable Electron-Poor Narrow-Gap AlGe Semiconductor
Mickael Beaudhuin, Loïc Perrière, Romain Viennois, Eric Alleno, Abel Haidoux, Roseline Esmilaire
In the present work, we report for the first time the full crystal structure, the lattice dynamics, and the electronic structure of metastable monoclinic AlGe which decomposes at about 230 °C. Monoclinic AlGe is an electron-poor narrow-gap semiconductor made of four atom Al2Ge2 rings, and its crystal and electronic structure are closely related to those of good thermoelectric zinc antimonide materials. It has the potential for many applications if the stability and purity issues can be solved.

Publisher URL: http://dx.doi.org/10.1021/acs.inorgchem.7b01318

DOI: 10.1021/acs.inorgchem.7b01318

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