5 years ago

Phonon-Assisted Ultrafast Charge Transfer at van der Waals Heterostructure Interface

Phonon-Assisted Ultrafast Charge Transfer at van der Waals Heterostructure Interface
Hrvoje Petek, Qijing Zheng, Jin Zhao, Wissam A. Saidi, Oleg V. Prezhdo, Zhenggang Lan, Yu Xie
The van der Waals (vdW) interfaces of two-dimensional (2D) semiconductor are central to new device concepts and emerging technologies in light-electricity transduction where the efficient charge separation is a key factor. Contrary to general expectation, efficient electron–hole separation can occur in vertically stacked transition-metal dichalcogenide heterostructure bilayers through ultrafast charge transfer between the neighboring layers despite their weak vdW bonding. In this report, we show by ab initio nonadiabatic molecular dynamics calculations, that instead of direct tunneling, the ultrafast interlayer hole transfer is strongly promoted by an adiabatic mechanism through phonon excitation occurring on 20 fs, which is in good agreement with the experiment. The atomic level picture of the phonon-assisted ultrafast mechanism revealed in our study is valuable both for the fundamental understanding of ultrafast charge carrier dynamics at vdW heterointerfaces as well as for the design of novel quasi-2D devices for optoelectronic and photovoltaic applications.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b03429

DOI: 10.1021/acs.nanolett.7b03429

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