3 years ago

Towards graphite-free hot zone for directional solidification of silicon

Natasha Dropka, Iris Herrmann-Geppert, Detlef Klimm, Frank M. Kiessling, Ulrich Degenhardt, Iryna Buchovska
The reduction of SiC, Si3N4 and transition metals impurities in directionally solidified Si ingots poses one of the crucial challenges in the solar cells production. Particularly strong contamination comes from the graphite parts in the hot zone. Therefore, we selected three massive ceramic materials to replace graphite, developed the novel design of the crucible support and cover and compared the crystals grown in them with ingots from the standard graphite design. The experiments were performed for phosphorus n-doped silicon of G0 size. The ingots were compared with respect to O- and C-content, metal impurities, resistivity and lifetime. The superior performance of TiC relative to other ceramics was observed, particularly due to the lower concentration of substitutional carbon in Si ingot (up to 2.6 times) and the higher minority carrier lifetime of (up to 4.4 times) with narrow red zones.
You might also like
Never Miss Important Research

Researcher is an app designed by academics, for academics. Create a personalised feed in two minutes.
Choose from over 15,000 academics journals covering ten research areas then let Researcher deliver you papers tailored to your interests each day.

  • Download from Google Play
  • Download from App Store
  • Download from AppInChina

Researcher displays publicly available abstracts and doesn’t host any full article content. If the content is open access, we will direct clicks from the abstracts to the publisher website and display the PDF copy on our platform. Clicks to view the full text will be directed to the publisher website, where only users with subscriptions or access through their institution are able to view the full article.