3 years ago

Twin-induced phase transition from β-Ga 2 O 3 to α-Ga 2 O 3 in Ga 2 O 3 thin films

We deposited a 300-nm-thick Ga 2 O 3 thin film on an amorphous SiO 2 /Si substrate via pulsed laser deposition. X-ray diffraction patterns revealed the formation of β-Ga 2 O 3 phase at a substrate temperature of 700 °C. X-ray photoelectron spectra indicated that the degree of oxidation increased after annealing at 700 °C. Further annealings at higher temperatures led to a transition of the β-Ga 2 O 3 phase to the α-Ga 2 O 3 phase; this transition was caused by the twin structure formed during the crystallinity improvement process. In addition, we discuss the mechanism of the transition from the β phase to the α phase in the β-Ga 2 O 3 thin films.

Publisher URL: http://iopscience.iop.org/1882-0786/11/6/061105

DOI: 10.7567/APEX.11.061105

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