3 years ago

Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy

Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy
The material yield of Ga during GaN growth via halogen-free vapor-phase epitaxy (HF-VPE) was systematically investigated and found to be much higher than that obtained using conventional hydride VPE. This is attributed to the much lower process pressure and shorter seed-to-source distance, owing to the inherent chemical reactions and corresponding reactor design used for HF-VPE growth. Ultrahigh-yield GaN growth was demonstrated on a 4-in.-diameter sapphire seed substrate.

Publisher URL: http://iopscience.iop.org/1882-0786/11/6/065502

DOI: 10.7567/APEX.11.065502

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