4 years ago

Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride

Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride
Sokrates T. Pantelides, Wu Zhou, Linjun Li, Yu-Yang Zhang, Deyi Fu, Zijing Ding, Tae Joo Shin, Sock Mui Poh, Hai Xu, Xiaoxu Zhao, Hyeon Suk Shin, Tianhua Ren, Kian Ping Loh, Wei Fu, A-Rang Jang, Peng Song, Seong In Yoon
Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0° aligned and 60° antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60° antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.

Publisher URL: http://dx.doi.org/10.1021/jacs.7b05131

DOI: 10.1021/jacs.7b05131

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