3 years ago

Managing Green Emission in Coupled InGaN QW–QDs Nanostructures via Nanoengineering

Managing Green Emission in Coupled InGaN QW–QDs Nanostructures via Nanoengineering
Z. L. Wang, Z. C. Su, J. N. Wang, Y. Luo, L. Wang, Y. Yi, J. D. Yu, S. J. Xu, M. Z. Wang
By utilizing and designing coupled InGaN QW–QDs nanostructures as active layer, we show a demonstration of significant enhancement of green emission in the hybrid nanostructure with a 4.5 nm GaN barrier layer at high temperatures. Such enhancement is ascribed to temperature-dependent phonon-assisted tunneling of excitons from QW to QDs and suppression of nonradiative recombination of excitons localized in the QDs layer in the sample with a 4.5 nm barrier layer. This study shall be useful for optimization design of high-efficiency InGaN-based green LEDs and also could shed some light on the complicated internal luminescence mechanisms in InGaN QW–QDs hybrid nanostructures.

Publisher URL: http://dx.doi.org/10.1021/acs.jpcc.7b07826

DOI: 10.1021/acs.jpcc.7b07826

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