4 years ago

Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics
Fwzah H. Alshammari, Husam N. Alshareef, Khaled N. Salama, Mrinal K. Hota
We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 104 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.

Publisher URL: http://dx.doi.org/10.1021/acsami.7b03078

DOI: 10.1021/acsami.7b03078

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