3 years ago

Estimation of the Charge Injection Barrier at a Metal/Organic Semiconductor Interface Based on Accumulated Charge Measurement: The Effect of Offset Bias Voltages

Estimation of the Charge Injection Barrier at a Metal/Organic Semiconductor Interface Based on Accumulated Charge Measurement: The Effect of Offset Bias Voltages
Hiroyuki Tajima, Tomofumi Kadoya, Jun-ichi Yamada, Seiichi Sato, Kesuke Yoshida
The effect of the offset bias voltage on the threshold voltage of the hole injection into the organic-semiconductor (OS) layer was examined in detail in the accumulated charge measurement (ACM) for the n-type Si/SiO2/OS/Ag (OS = zinc phthalocyanine [ZnPc] or metal-free phthalocyanine [H2Pc]) capacitor. The threshold highly depends on the offset bias voltages, when the OS layer is in the hole-depletion regime. On the contrary, the threshold was nearly constant when the OS layer operated in the hole-accumulation regime. The hole injection barrier of the Ag/OS interface was obtained by the threshold in the accumulation regime. The obtained values were 0.41 and 0.05 eV for H2Pc/Ag and ZnPc/Ag interfaces, respectively. The study revealed that accurate estimation of the injection barrier is possible by examining the offset voltage dependence in the ACM.

Publisher URL: http://dx.doi.org/10.1021/acs.jpcc.7b04456

DOI: 10.1021/acs.jpcc.7b04456

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