Computational Synthesis of MoS2 Layers by Reactive Molecular Dynamics Simulations: Initial Sulfidation of MoO3 Surfaces

5 years ago

Computational Synthesis of MoS2 Layers by Reactive Molecular Dynamics Simulations: Initial Sulfidation of MoO3 Surfaces

Fuyuki Shimojo, Pankaj Rajak, Rajiv K. Kalia, Masaaki Misawa, Priya Vashishta, Aiichiro Nakano, Subodh Tiwari, Sungwook Hong, Aravind Krishnamoorthy

Transition metal dichalcogenides (TMDC) like MoS₂ are promising candidates for next-generation electric and optoelectronic devices. These TMDC monolayers are typically synthesized by chemical vapor deposition (CVD). However, despite significant amount of empirical work on this CVD growth of monolayered crystals, neither experiment nor theory has been able to decipher mechanisms of selection rules for different growth scenarios, or make predictions of optimized environmental parameters and growth factors. Here, we present an atomic-scale mechanistic analysis of the initial sulfidation process on MoO₃ surfaces using first-principles-informed ReaxFF reactive molecular dynamics (RMD) simulations. We identify a three-step reaction process associated with synthesis of the MoS₂ samples from MoO₃ and S₂ precursors: O₂ evolution and self-reduction of the MoO₃ surface; SO/SO₂ formation and S₂-assisted reduction; and sulfidation of the reduced surface and Mo–S bond formation. These atomic processes occurring during early stage MoS₂ synthesis, which are consistent with experimental observations and existing theoretical literature, provide valuable input for guided rational synthesis of MoS₂ and other TMDC crystals by the CVD process.

Publisher URL: http://dx.doi.org/10.1021/acs.nanolett.7b01727

DOI: 10.1021/acs.nanolett.7b01727