4 years ago

Large Lateral Photovoltaic Effect in MoS 2 /GaAs Heterojunction

Yunjie Liu, Zhijie Xu, Jun Zhu, Zhide Han, Lanzhong Hao


Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/n-GaAs heterojunction. The LPE exhibits a linear dependence on the position of the laser illumination and the considerably high sensitivity of 416.4 mV mm 1. This sensitivity is much larger than the values in other reported MoS2-based devices. Comparatively, the LPE in the MoS2/p-GaAs heterojunction is much weaker. The mechanisms to the LPE are unveiled by constructing the energy-band alignment of the MoS2/GaAs heterojunctions. The excellent LPE characteristics make MoS2 films combined with GaAs semiconductors promising candidates for the application of high-performance position-sensitive detectors.

Publisher URL: https://link.springer.com/article/10.1186/s11671-017-2334-z

DOI: 10.1186/s11671-017-2334-z

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